β-Gallium oxide power electronics

被引：363

作者：

Green, Andrew J. ^{[1
]}

Speck, James ^{[2
]}

Xing, Grace ^{[3
]}

Moens, Peter ^{[4
]}

Allerstam, Fredrik ^{[4
]}

Gumaelius, Krister ^{[4
]}

Neyer, Thomas ^{[4
]}

Arias-Purdue, Andrea ^{[5
]}

Mehrotra, Vivek ^{[5
]}

Kuramata, Akito ^{[6
]}

Sasaki, Kohei ^{[6
]}

Watanabe, Shinya ^{[6
]}

Koshi, Kimiyoshi ^{[6
]}

Blevins, John ^{[1
]}

Bierwagen, Oliver ^{[7
]}

Krishnamoorthy, Sriram ^{[2
]}

Leedy, Kevin ^{[1
]}

Arehart, Aaron R. ^{[8
]}

Neal, Adam T. ^{[1
]}

Mou, Shin ^{[1
]}

Ringel, Steven A. ^{[8
]}

Kumar, Avinash ^{[9
]}

Sharma, Ankit ^{[9
]}

Ghosh, Krishnendu ^{[9
]}

Singisetti, Uttam ^{[9
]}

Li, Wenshen ^{[2
]}

Chabak, Kelson ^{[1
]}

Liddy, Kyle ^{[1
]}

Islam, Ahmad ^{[1
]}

Rajan, Siddharth ^{[8
]}

Graham, Samuel ^{[10
]}

Choi, Sukwon ^{[11
]}

Cheng, Zhe ^{[12
]}

Higashiwaki, Masataka ^{[13
]}

机构：

[1] US Air Force, Res Lab, Wright Patterson AFB, OH 45433 USA

[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

[3] Cornell Univ, Ithaca, NY 14850 USA

[4] ON Semicond, B-9700 Oudenaarde, Belgium

[5] Teledyne, Thousand Oaks, CA 91360 USA

[6] Novel Crystal Technol Inc, Tokyo 1000005, Japan

[7] Leibniz Inst Forsch Verbund, Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[8] Ohio State Univ, Columbus, OH 43210 USA

[9] SUNY Buffalo, Buffalo, NY 14260 USA

[10] Georgia Inst Technol, Atlanta, GA 30332 USA

[11] Penn State Univ, University Pk, PA 16802 USA

[12] Univ Illinois, Urbana, IL 61801 USA

[13] Natl Inst Informat & Commun Technol, Tokyo 1848795, Japan

来源：

APL MATERIALS | 2022年 / 10卷 / 02期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; SCHOTTKY-BARRIER DIODES; DOPED BETA-GA2O3; ALGAN/GAN HEMTS; GROWTH-RATE; MOSFETS; PERFORMANCE; EPITAXY; FIGURE; AL2O3;

D O I：

10.1063/5.0060327

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community. Addressing these challenges will enhance the state-of-the-art device performance and allow us to design efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform. (c) 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).

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