Room-temperature coherent control of implanted defect spins in silicon carbide

被引：37

作者：

Yan, Fei-Fei ^{[1
,2
]}

Yi, Ai-Lun ^{[3
,4
]}

Wang, Jun-Feng ^{[1
,2
]}

Li, Qiang ^{[1
,2
]}

Yu, Pei ^{[1
,5
,6
,7
]}

Zhang, Jia-Xiang ^{[3
,4
]}

Gali, Adam ^{[8
,9
]}

Wang, Ya ^{[1
,5
,6
,7
]}

Xu, Jin-Shi ^{[1
,2
]}

Ou, Xin ^{[3
,4
]}

Li, Chuan-Feng ^{[1
,2
]}

Guo, Guang-Can ^{[1
,2
]}

机构：

[1] Univ Sci & Technol China, CAS Key Lab Quantum Informat, Hefei 230026, Peoples R China

[2] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[4] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[5] Univ Sci & Technol China, CAS Key Lab Microscale Magnet Resonance, Hefei 230026, Peoples R China

[6] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Peoples R China

[7] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

[8] Budapest Univ Technol & Econ, Dept Atom Phys, Budafoki Ut 8, H-1111 Budapest, Hungary

[9] Wigner Res Ctr Phys, POB 49, H-1525 Budapest, Hungary

来源：

NPJ QUANTUM INFORMATION | 2020年 / 6卷 / 01期

基金：

欧盟地平线“2020”; 中国国家自然科学基金;

关键词：

SOLID-STATE SPIN; ELECTRON SPINS;

D O I：

10.1038/s41534-020-0270-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.

引用

页数：6