Approaching the resolution limit of nanometer-scale electron beam-induced deposition

被引:230
作者
van Dorp, WF
van Someren, B
Hagen, CW
Kruit, P
Crozier, PA
机构
[1] Delft Univ Technol, Fac Sci Appl, NL-2628 CJ Delft, Netherlands
[2] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
关键词
D O I
10.1021/nl050522i
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the writing of very high resolution tungsten containing dots in regular arrays by electron beam-induced deposition (EBID). The size averaged over 100 dots was 1.0 nm at fwhm. Because of the statistical spread in the dot size, large and small dots are present in the arrays, with the smallest having a diameter of only 0.7 nm at fwhm. To date these are the smallest features fabricated by EBID. We have also fabricated lines with the smallest having a width at fwhm of 1.9 nm and a spacing of 3.2 nm.
引用
收藏
页码:1303 / 1307
页数:5
相关论文
共 50 条
[21]   Effect of electron beam-induced deposition and etching under bias [J].
Choi, Young R. ;
Rack, Philip D. ;
Frost, Bernhard ;
Joy, David C. .
SCANNING, 2007, 29 (04) :171-176
[22]   Formation of masking pattern by electron beam-induced vapor deposition [J].
M. A. Bruk ;
E. N. Zhikharev ;
S. L. Shevchuk ;
I. A. Volegova ;
A. V. Spirin ;
E. N. Teleshov ;
V. A. Kal’nov ;
Yu. P. Maishev .
High Energy Chemistry, 2008, 42 :105-112
[23]   Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues [J].
Sakamoto, T ;
Manako, S ;
Fujita, J ;
Ochiai, Y ;
Baba, T ;
Yamamoto, H ;
Teshima, T .
APPLIED PHYSICS LETTERS, 2000, 77 (02) :301-303
[24]   Electron beam-induced nano-deposition using a transmission electron microscope [J].
Shimojo, M ;
Mitsuishi, K ;
Tanaka, M ;
Song, M ;
Furuya, K .
CROSS-DISCIPLINARY APPLIED RESEARCH IN MATERIALS SCIENCE AND TECHNOLOGY, 2005, 480 :129-132
[25]   Nanometer-scale patterning of polystyrene resists in low-voltage electron beam lithography [J].
Manako, S ;
Fujita, J ;
Ochiai, Y ;
Nomura, E ;
Matsui, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B) :7773-7776
[26]   Electron beam recorder with nanometer-scale accuracy for 100 Gbit/in 2 density mastering [J].
Kitahara, H. (hiroaki_kitahara@post.pioneer.co.jp), 1600, Japan Society of Applied Physics (43)
[27]   Local mechanical spectroscopy with nanometer-scale lateral resolution [J].
Oulevey, F ;
Gremaud, G ;
Semoroz, A ;
Kulik, AJ ;
Burnham, NA ;
Dupas, E ;
Gourdon, D .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1998, 69 (05) :2085-2094
[28]   Nanometer-scale patterning of polystyrene resists in low-voltage electron beam lithography [J].
NEC Corp, Tsukuba, Japan .
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7773-7776)
[29]   Nanometer-scale precipitations in a selective electron beam melted nickel-based superalloy [J].
Chandra, Shubham ;
Tan, Xipeng ;
Narayan, R. Lakshmi ;
Descoins, Marion ;
Mangelinck, Dominique ;
Tor, Shu Beng ;
Liu, Erjia ;
Seet, Gerald .
SCRIPTA MATERIALIA, 2021, 194
[30]   Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution [J].
Cooper, David ;
Barnes, Jean-Paul ;
Hartmann, Jean-Michel ;
Beche, Armand ;
Rouviere, Jean-Luc .
APPLIED PHYSICS LETTERS, 2009, 95 (05)