Surface analysis of 6H-SiC

被引：60
|
作者：
vanElsbergen, V
Kampen, TU
Monch, W
机构：
[1] Gerhard-Mercator-Univ. Duisburg, Lab. für Festkörperphysik, D-47048 Duisburg
来源：
SURFACE SCIENCE | 1996年 / 365卷 / 02期
关键词：
Auger electron spectroscopy; low energy electron diffraction (LEED); silicon carbide; soft X-ray photoelectron spectroscopy; surface relaxation and reconstruction; X-ray photoelectron spectroscopy;
D O I：
10.1016/0039-6028(96)00707-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The composition of {0001} surfaces of 6H-SiC samples was studied by using low-energy electron diffraction, Auger electron (AES), and X-ray photoelectron spectroscopy (XPS/SXPS). The samples were cleaned in ultrahigh vacuum by heating them either in the presence of a Si flux at different temperatures or by annealing at 1170 K for 10 min. Depending on the preparation method and temperature used four reconstructions were observed: (1x1), (3x3), (root 3x root 3)R30 degrees, and (6 root 3x6 root 3)R30 degrees. The compositions of the reconstructions and the chemical bonding of the surface atoms were characterized using AES and XPS/SXPS. Models for the reconstructions are proposed.
引用
收藏
页码：443 / 452
页数：10
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