AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 μA/μm at 0.5 V

被引：118

作者：

Li, Rui ^{[1
]}

Lu, Yeqing ^{[1
]}

Zhou, Guangle ^{[1
]}

Liu, Qingmin ^{[1
]}

Chae, Soo Doo ^{[1
]}

Vasen, Tim ^{[1
]}

Hwang, Wan Sik ^{[1
]}

Zhang, Qin ^{[1
]}

Fay, Patrick ^{[1
]}

Kosel, Tom ^{[1
]}

Wistey, Mark ^{[1
]}

Xing, Huili ^{[1
]}

Seabaugh, Alan ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 03期

关键词：

Heterojunction; tunnel field-effect transistor (TFET); tunneling;

D O I：

10.1109/LED.2011.2179915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record high on-current of 78 mu A/mu m in a tunnel field-effect transistor (TFET) is achieved at 0.5 V at room temperature. The TFET employs a staggered AlGaSb/InAs heterojunction with the tunneling direction oriented in-line with the gate field. The measured results are consistent with numerical simulation of the device structure. Simulations of optimized structures suggest that switching speed comparable to that of the MOSFET should be achievable with improvements in the source and drain resistances.

引用

页码：363 / 365

页数：3

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