Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the Massive Parallel Electron Beam Direct-Write system

被引：1

作者：

Kojima, A. ^{[1
]}

Ikegami, N. ^{[1
]}

Yoshida, T. ^{[1
]}

Miyaguchi, H. ^{[1
]}

Muroyama, M. ^{[1
]}

Yoshida, S. ^{[1
]}

Totsu, K. ^{[1
]}

Koshida, N. ^{[2
]}

Esashi, M. ^{[1
]}

机构：

[1] Tohoku Univ, Aoba Ku, 519-1176 Aoba, Sendai, Miyagi 9800845, Japan

[2] Tokyo Univ Agri & Tech, 2-24-16 Nakamachi, Koganei, Tokyo 1848588, Japan

来源：

ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES VIII | 2016年 / 9777卷

关键词：

massive parallel; MEMS; nanocrystalline silicon; condenser lens array; electron beam lithography;

D O I：

10.1117/12.2219338

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Developments of a Micro Electro-Mechanical System (MEMS) electrostatic Condenser Lens Array (CLA) for a Massively Parallel Electron Beam Direct Write (MPEBDW) lithography system are described. The CLA converges every parallel electron beams for fine patterning. The structure of the CLA was designed on a basis of analysis by a finite element method (FEM) simulation. The lens was fabricated with precise machining and assembled with a nanocrystalline silicon (nc-Si) electron emitter array as an electron source of MPEBDW. The nc-Si electron emitter has the advantage that a vertical-emitted surface electron beam can be obtained without any extractor electrodes. FEM simulation of electron optics characteristics showed that the size of the electron beam emitted from the electron emitter was reduced to 15% by a radial direction, and the divergence angle is reduced to 1/18.

引用

页数：9

共 7 条

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