Normal incidence infrared photoconductor of self-assembled InAs quantum dots in modulation doped AlGaAs/GaAs heterostructures

被引：1
|
作者：
Kim, MD
Choo, AG
Kim, TI
Ko, SS
Baek, DH
Hong, SC
机构：
[1] Samsung Elect Co Ltd, Optoelect Div Informat & Commun Business, Paldal Gu, Suwon 442742, Kyungki Do, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Yusong Gu, Taejon 305701, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
molecular beam epitaxy; nanomaterials; semiconducting III-V materials; infrared devices;
D O I：
10.1016/S0022-0248(01)01007-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have designed and fabricated a quantum dot infrared photodetector which utilizes the lateral transport of photoexcited carriers in the A1GaAs/GaAs two-dimensional (2D) channels. A photocurrent signal has been observed in the range of 9.5-11 mum with a peak at 10.5 mum due to the buund-to-continuum intersubband absorption of the normal incidence radiation in the self-assembled InAs quantum dots. The peak detectivity was measured to be 1 x 10(9) om Hz(1/2)/W at 220K. The high detectivity is realized mainly by low dark current, high mobility and a long lifetime of photoexcited carriers in the modulation doped 2D channels. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码：1162 / 1165
页数：4
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