Blistering behavior in Mo/Si multilayers

被引：7

作者：

Kuznetsov, A. S. ^{[1
]}

Gleeson, M. A. ^{[1
]}

van de Kruijs, R. W. E. ^{[1
]}

Bijkerk, F. ^{[1
]}

机构：

[1] EURATOM, FOM, Inst Plasma Phys Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands

来源：

DAMAGE TO VUV, EUV, AND X-RAY OPTICS III | 2011年 / 8077卷

关键词：

EUV lithography; hydrogen; blistering; Mo/Si multilayers;

D O I：

10.1117/12.887326

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper is concerned with mapping the characteristics of blistering induced on Mo/Si multilayers as a result of irradiation by hydrogen species generated in a thermal capillary cracker. The nature and extent of the damage observed is dependent on exposure conditions such as the sample temperature, the hydrogen isotope used and the total fluence. Increasing the sample temperature leads to fewer but larger blisters. When D-2 is used as the working gas, blisters are similar to 5 times smaller in diameter than in the case of H-2 exposure, but more blisters are formed. Increasing the gas flow induces more and bigger blisters and blisters were observed to develop in two distinct size distributions.

引用

页数：8

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