In situ surface pre-treatment study of GaAs and In0.53Ga0.47As

被引：29

作者：

Brennan, B. ^{[1
]}

Zhernokletov, D. M. ^{[1
]}

Dong, H. ^{[1
]}

Hinkle, C. L. ^{[1
]}

Kim, J. ^{[1
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 15期

基金：

美国国家科学基金会;

关键词：

SYNCHROTRON-PHOTOEMISSION-SPECTROSCOPY; ATOMIC LAYER DEPOSITION; GAAS(100); INTERFACES;

D O I：

10.1063/1.3702885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of using multiple cycles of trimethyl-aluminum (TMA) prior to Al2O3 deposition on the properties of (NH4)(2)S treated In0.53Ga0.47As and GaAs substrates was investigated by in situ x-ray photoelectron spectroscopy. Increasing the number of TMA cycles prior to Al2O3 atomic layer deposition (ALD) was seen to decrease the concentration of As-As detected at the oxide-semiconductor interface. The impact of annealing the (NH4)(2)S treated GaAs surface in situ prior to ALD, in various environments, was also investigated. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702885]

引用

页数：4

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