Optical properties of GaAs/Ga 1-xAlxAs ridge quantum wire: Third-harmonic generation

被引：40

作者：

Khordad, R. ^{[1
]}

Mirhosseini, B. ^{[1
]}

机构：

[1] Univ Yasuj, Dept Phys, Coll Sci, Yasuj 75914353, Iran

来源：

OPTICS COMMUNICATIONS | 2012年 / 285卷 / 06期

关键词：

Third-harmonic generation; Quantum wire; Optical properties; REFRACTIVE-INDEX CHANGES; STATES; CONFINEMENT; ABSORPTION; NONLINEARITY; ELECTRON; IMPURITY; ENERGY; MODEL; WELL;

D O I：

10.1016/j.optcom.2011.11.070

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, the third-harmonic generation (THG) in GaAs/Ga1-xAlxAs ridge quantum wires is studied in detail. An analytic expression for the THG is obtained using a compact density matrix approach and an iterative procedure. Numerical calculations are performed for the typical GaAs/Ga1-xAlxAs ridge quantum wire. The results show that the maximum THG over 10(-9)?m(2)?/V-2? can be obtained. Another important point is that the structural parameters have great influence on the THG in this system. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1233 / 1237

页数：5

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