Relaxing the graphite lattice along critical directions:: The effect of the electron-phonon coupling on the π electron band structure

被引:11
作者
Tommasini, M
Di Donato, E
Castiglioni, C
Zerbi, G
机构
[1] Politecn Milan, Dept Chem Mat & Chem Engn G Natta, I-20133 Milan, Italy
[2] INSTM, UdR Milano, Milan, Italy
关键词
D O I
10.1016/j.cplett.2005.07.117
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigate the effects on the electronic structure induced by a relaxation of the graphite lattice along the direction of the phonons associated to the G and to the D peak characteristic of the Raman spectra of graphitic materials. To this aim the bond length dependence of the hopping integral beta is introduced in a Huckel (tight-binding) hamiltonian, giving rise to two different beta(1) and beta(2) parameters. A Peierls-like gap opening is found for a relaxation along the D peak phonon and not for the G peak phonon. The electronic density of states is discussed and a link is shown between the electronic structure of benzene and the electronic structure of graphene at the K point in reciprocal space. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:166 / 173
页数:8
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