Modelling of photon absorption and carrier dynamics in HgCdTe under mid-IR laser irradiation

被引：0
|
作者：
Villanger, A. S. [1 ]
Brudevoll, T. [1 ]
Stenersen, K. [1 ]
机构：
[1] FFI Norwegian Def Res Estab, NO-2027 Kjeller, Norway
来源：
NARROW GAP SEMICONDUCTORS 2007 | 2008年 / 119卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present results from a numerical study on carrier dynamics, heating, and melting damage threshold in a 10 mu m thick layer of Hg0.72Cd0.28 induced by 1 mu s long laser pulses at photon energies close to the band gap. At the shortest wavelength of 3.8 mu m the simulations indicate that surface melting will occur at fluence levels in the range of 2-3 J/cm(2), while fluences of more than 10 J/cm(2) will be required for melting at wavelengths beyond 5 mu m.
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页码：93 / 95
页数：3
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