RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

被引：9

作者：

Gonzalez, Benito ^{[1
]}

Lazaro, Antonio ^{[2
]}

Rodriguez, Raul ^{[3
]}

机构：

[1] Univ Las Palmas Gran Canaria, Inst Appl Microelect, Campus Univ Tafira, Las Palmas Gran Canaria 35017, Spain

[2] Univ Rovira & Virgili, Dept Elect Elect & Automat Control Engn, Escola Tecn Super Engn, Tarragona 43007, Spain

[3] Interuniv Microelect Ctr IMEC, B-3001 Leuven, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 05期

关键词：

Thermal resistance; Resistance; Logic gates; Temperature measurement; Semiconductor device measurement; MODFETs; HEMTs; AC; pulsed measurement; electrothermal characterization; gallium nitride; high-electron-mobility transistors (HEMTs); thermal resistance; ALGAN/GAN HEMTS; TEMPERATURE; TECHNOLOGIES; TIME;

D O I：

10.1109/TED.2022.3159611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.

引用

页码：2307 / 2312

页数：6

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