The influence of NH3 flow rate on the microstructure and oxidation properties of a-Si-C-N:H films prepared by PECVD technology

被引:9
作者
Jiang, Lihua [1 ]
Tian, Haiyan [1 ]
Li, Jie [2 ]
Xiang, Peng [1 ]
Peng, Yu [1 ]
Wang, Tao [1 ]
Hou, Pingping [1 ]
Xiao, Ting [1 ]
Tan, Xinyu [1 ]
机构
[1] China Three Gorges Univ, Coll Mat & Chem Engn, Key Lab Inorgan Nonmetall Crystalline & Energy Co, Yichang 443002, Peoples R China
[2] Chengdu Univ Informat Technol, Coll Optoelect Technol, Chengdu 610225, Peoples R China
基金
中国国家自然科学基金;
关键词
Oxidation; a-Si-C-N:H film; PECVD; Carbon nanocluster; CHEMICAL-VAPOR-DEPOSITION; NITRIDE THIN-FILMS; OPTICAL-PROPERTIES; MECHANICAL-PROPERTIES; SILICON; SURFACE; IR;
D O I
10.1016/j.apsusc.2020.145861
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hydrogenated amorphous silicon carbon nitride (a-Si-C-N:H) films embedded with carbon nanoclusters were deposited by plasma enhanced chemical vapour deposition (PECVD) method. The microstructure and oxidation properties of the films were mainly analysed by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectroscopy (XPS), Raman and high-resolution transmission electron microscopy (HRTEM). The influence of the NH3 flow rate on the film oxidation properties in air at room temperature has been investigated. The results showed that the carbon atoms tend to bond with each other during the film deposition and then form carbon nanoclusters. In addition, with increasing NH3 flow rate, the results also indicated that more N and C atoms bonded with Si atoms would be replaced by O atoms, and the N atoms mainly bonded with C atoms and the O atoms mainly bonded with Si atoms. Furthermore, the films became more and more dense, but the film oxidation was more and more serious. The oxidation of the film was mainly attributed to the production of the related silicon dangling bonds and the formation of the smaller carbon nanoclusters.
引用
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页数:11
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