Buffer-Layer Dependence of Interface Magnetic Anisotropy in Co2Fe0.4Mn0.6Si Heusler Alloy Ultrathin Films

被引：3

作者：

Sun, Mingling ^{[1
]}

Kubota, Takahide ^{[1
,2
]}

Kawato, Yoshiaki ^{[3
]}

Takahashi, Shigeki ^{[3
]}

Tsukamoto, Arata ^{[4
]}

Sonobe, Yoshiaki ^{[3
]}

Takanashi, Koki ^{[1
,2
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan

[3] Samsung Res Inst Japan, Yokohama, Kanagawa 2300027, Japan

[4] Nihon Univ, Dept Elect Engn, Funabashi, Chiba 2748501, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2017年 / 53卷 / 11期

关键词：

Heusler alloy; interface anisotropy; perpendicular magnetic anisotropy (PMA); MULTILAYERS; CO;

D O I：

10.1109/TMAG.2017.2728627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buffer-layer dependences of dead-layer thickness, saturation magnetization (M-s), and interface magnetic anisotropy (K-s) were systematically investigated for Co2Fe0.4Mn0.6Si (CFMS) Heusler alloy ultrathin films with Pd, Ru, and Cr buffer layers. Perpendicular magnetization was only achieved in 0.6 and 0.8 nm-thick CFMS ultrathin films deposited on Pd buffer layer and annealed at 400 degrees C. At the optimum annealing temperature of 400 degrees C, Ks of 1.2 erg/cm(2) was obtained for the Pd buffer layer, which was 3-6 times larger than those for Ru and Cr buffer layers. The difference in Ks probably originates from the interdiffusion and different crystallized compounds at the interface between Pd (Ru, Cr) and CFMS layers.

引用

页数：4

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