Electrostatic performance improvement of dual material cylindrical gate MOSFET using work-function modulation technique

被引：15

作者：

Jena, Biswajit ^{[1
]}

Dash, Sidhartha ^{[1
]}

Mishra, Guru Prasad ^{[2
]}

机构：

[1] Siksha O Anusandhan Univ, Inst Tech Educ & Res, Device Simulat Lab, Dept Elect & Commun Engn, Bhubaneswar, Orissa, India

[2] Siksha O Anusandhan Univ, Inst Tech Educ & Res, Device Simulat Lab, Dept Elect & Instrumentat Engn, Bhubaneswar, Orissa, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 97卷

关键词：

DMCG; Work-function modulated gate; Subthreshold swing; Drain current; SCALING THEORY; SOI MOSFET; MODEL; ALLOYS; CHARGE;

D O I：

10.1016/j.spmi.2016.06.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In a continuous effort to increase the DC and RF figure-of-merits (FOMs), multigate MOSFETs have evolved from classical planar device into a gate all around structure. The unique design with accuracy in device performance has made it a cutting edge device to overcome the scaling and performance barrier of the present VLSI technology. The fabrication process of a surface channel device with proper threshold voltage (V-th) directly depends upon the work-function of the gate electrode. By keeping it in mind, a metal gate with linearly modulated work-function (5-4.2 ev) along the z-axis in a cylindrical surrounding gate MOSFET is introduced. This work demonstrates the potential benefits of work-function modulation based dual material cylindrical gate MOSFET (WMDMCG) in terms of DC performance characteristics. The present model provides improved DC performance as compared to conventional dual material cylindrical surrounding gate MOSFET (DMCG) and the results obtained are validated with TCAD device simulator from Synopsys. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：212 / 220

页数：9

共 30 条

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