Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures

被引：10

作者：

Kato, Daimotsu ^{[1
]}

Kajiwara, Yosuke ^{[1
]}

Mukai, Akira ^{[1
]}

Ono, Hiroshi ^{[1
]}

Shindome, Aya ^{[1
]}

Tajima, Jumpei ^{[1
]}

Hikosaka, Toshiki ^{[1
]}

Kuraguchi, Masahiko ^{[1
]}

Nunoue, Shinya ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / SG期

关键词：

ALGAN/GAN HEMTS; VOLTAGE; OPERATION; TRANSISTORS;

D O I：

10.35848/1347-4065/ab6b7f

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the suppression of short-channel effects (SCEs) in normally-off GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with deep recessed-gate structures. TCAD simulation results show that the electric field concentration is effectively reduced at the recessed edge of MOSFETs with deeper recessed-gate structures. To demonstrate suppression of SCEs, MOSFET gate structures with recess depths ranging from 45 to 165 nm were fabricated and evaluated. Experimental results show that deeper recessed-gate structures are highly effective for suppressing drain-induced barrier lowering and improving subthreshold swing and threshold voltage roll-off. (C) 2020 The Japan Society of Applied Physics

引用

页数：5

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