Raman spectroscopy of CuIn1-xGaxSe2 for in-situ monitoring of the composition ratio

被引：55
|
作者：
Choi, In-Hwan [1 ]
机构：
[1] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 13期
关键词：
Copper indium gallium diselenide; Copper indium diselenide; Raman spectroscopy; Metal organic chemical vapor deposition; CHEMICAL-VAPOR-DEPOSITION; FILMS; SPECTRA;
D O I：
10.1016/j.tsf.2011.02.058
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Metal organic vapor deposition (MOCVD) is a well known method for preparing high quality and large area CuIn1-xGaxSe2 (CIGS) absorber layers. Some in-situ non-contact monitoring systems are needed when CIGS absorber layers are manufactured in industry. In this study, CuInSe2 (CIS) and CIGS thin films with different composition ratios, [Cu]/[In + Ga], were prepared by MOCVD using [Me2In(mu-SeMe)](2), hexafluoroacetylacetonate Cu(I) (3,3-dimethyl-1-butene), trimethyl gallium and dimethyle diselenide as the In-Se single source, Cu, Ga and Se precursors, respectively. The Raman shift spectra of the films with various composition ratios were analyzed to produce a basic algorithm that can determine the composition ratios of CIS and CIGS thin films indirectly. (c) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：4390 / 4393
页数：4
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