Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors

被引：249

作者：

Xie, Li ^{[1
,2
,3
]}

Liao, Mengzhou ^{[1
,2
,3
]}

Wang, Shuopei ^{[1
,2
,3
]}

Yu, Hua ^{[1
,2
,3
]}

Du, Luojun ^{[1
,2
]}

Tang, Jian ^{[1
,2
,3
]}

Zhao, Jing ^{[4
]}

Zhang, Jing ^{[5
]}

Chen, Peng ^{[1
,2
,3
]}

Lu, Xiaobo ^{[1
,2
,3
]}

Wang, Guole ^{[1
,2
,3
]}

Xie, Guibai ^{[6
]}

Yang, Rong ^{[1
,2
,3
,7
]}

Shi, Dongxia ^{[1
,2
,3
,7
]}

Zhang, Guangyu ^{[1
,2
,3
,7
,8
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China

[4] Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China

[5] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[6] China Acad Space Technol Xian, Natl Key Lab Sci & Technol Space Microwave, Xian 710100, Shaanxi, Peoples R China

[7] Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China

[8] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 37期

基金：

美国国家科学基金会;

关键词：

graphene contacts; MoS2; short-channel effects; ultrashort channels; FIELD-EFFECT TRANSISTORS; LAYER MOS2; SCALE; JUNCTIONS;

D O I：

10.1002/adma.201702522

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2. FETs with channel lengths scaling down to approximate to 4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics.

引用

页数：7

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