Compensating defects in Si-doped AlN bulk crystals

被引：22

作者：

Irmscher, K. ^{[1
]}

Schulz, T. ^{[1
]}

Albrecht, M. ^{[1
]}

Hartmann, C. ^{[1
]}

Wollweber, J. ^{[1
]}

Fornari, R. ^{[1
]}

机构：

[1] Inst Crystal Growth, D-12489 Berlin, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷

关键词：

AlN bulk crystals; Si doping; compensation;

D O I：

10.1016/j.physb.2007.08.178

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The rather low n-type conductivity observed in. Si-doped sublimation-grown AlN bulk crystals is explained by the formation of high concentrations of compensating defects. The model is based on the experimental verification of a shallow impurity band formed by Si donors and the presence of acceptor-like electron traps within 1 eV below the conduction band edge. Further it is suggested that the majority of the Si donors is compensated by deep acceptors in the lower half of the band gap. This compensation model is an alternative to the controversially discussed assumption of Si DX center formation. (c) 2007 Elsevier B.V. All rights reserved.

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收藏

页码：323 / 326

页数：4

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