Radiation-induced defects in GaN

被引：6

作者：

Son, N. T. ^{[1
]}

Hemmingsson, C. G. ^{[1
]}

Morishita, N. ^{[2
]}

Ohshima, T. ^{[2
]}

Paskova, T. ^{[3
]}

Evans, K. R. ^{[3
]}

Usui, A. ^{[4
]}

Isoya, J. ^{[5
]}

Monemar, B. ^{[1
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

[3] Kyma Technol Inc, Raleigh, NC 27617 USA

[4] Furukawa Co Ltd, R&D Div, Tsukuba, Ibaraki 3050856, Japan

[5] Univ Tsukuba, Grad Sch Lib Informat & Media Studies, Tsukuba, Ibaraki 3058550, Japan

来源：

PHYSICA SCRIPTA | 2010年 / T141卷

关键词：

IDENTIFICATION; LUMINESCENCE; IMPURITIES; VACANCIES; CRYSTALS;

D O I：

10.1088/0031-8949/2010/T141/014015

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Radiation-induced defects in n-type GaN irradiated by 2 MeV electrons at room temperature were studied by electron paramagnetic resonance (EPR). Four EPR spectra, labelled D1-D4, were observed in irradiated n-type GaN. The D1 spectrum is a broad line (similar to 10-12 mT in line width) with an isotropic g-value g similar to 2.03 and can be detected in all the studied samples in the temperature range of 4-300 K. The D2 centre has an electron spin S = 1/2 and shows a clear hyperfine structure due to interaction with three equivalent N-14. The g-values of the axial configuration are determined to be g(parallel to) = 2.001 and g(perpendicular to) = 1.999. On the basis of the observed hyperfine structure, formation conditions and annealing behaviour, the D2 defect was assigned to the gallium vacancy-oxygen pair in the negative charge state, (VGaON)(-).

引用

页数：4

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