Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

被引：35

作者：

Yang, Xuyong ^{[1
]}

Ren, Fuqiang ^{[2
]}

Wang, Yue ^{[3
]}

Ding, Tao ^{[4
]}

Sun, Handong ^{[3
,5
]}

Ma, Dongling ^{[2
]}

Sun, Xia Wei ^{[6
]}

机构：

[1] Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China

[2] Univ Quebec, INRS, 1650 Blvd Lionel Boulet, Varennes, PQ J3X 1S2, Canada

[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Nanyang Ave, Singapore 637371, Singapore

[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Nanyang Ave, Singapore 639798, Singapore

[5] Nanyang Technol Univ, Sch Phys & Math Sci, CDPT, Singapore 637371, Singapore

[6] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Coll Engn, 1088 Xue Yuan Rd, Shenzhen 518055, Guangdong, Peoples R China

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

中国国家自然科学基金;

关键词：

HIGHLY EFFICIENT; NANOCRYSTALS; PERFORMANCE; DEVICES; LIGANDS; BRIGHT;

D O I：

10.1038/s41598-017-15244-5

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

PbS based quantum dots (QDs) have been studied in great detail for potential applications in electroluminescent devices operating at wavelengths important for telecommunications (1.3-1.6 mu m). Despite the recent advances in field of quantum dot light-emitting diode (QLED), further improvements in near-infrared (NIR) emitting device performance are still necessary for the widespread use and commercialization of NIR emitting QLED technology. Here, we report a high-performance 1.51-mu m emitting QLED with inverted organic-inorganic hybrid device architecture and PbS/CdS core-shell structured quantum dots as emitter. The resultant QLEDs show a record device performance for the QLEDs in 1.5 mu m emission window, with a maximum radiance of 6.04 Wsr(-1) m(-2) and peak external quantum efficiency (EQE) of 4.12%, respectively.

引用

页数：6

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