Growth Mechanism of Oxygen-Containing Functional Plasma Polymers

被引:60
作者
Hegemann, D. [1 ]
Koerner, E. [1 ]
Albrecht, K. [1 ]
Schuetz, U. [1 ]
Guimond, S. [1 ]
机构
[1] Empa, Swiss Fed Labs Mat Testing & Res, CH-9014 St Gallen, Switzerland
关键词
ablation; deposition; R F plasma; specific energy; RADIO-FREQUENCY DISCHARGE; MACROSCOPIC KINETICS; MICROWAVE PLASMA; ENERGY-DISTRIBUTION; C-H; SURFACE; POLYMERIZATION; ION; DEPOSITION; FILMS;
D O I
10.1002/ppap.200900144
中图分类号
O59 [应用物理学];
学科分类号
摘要
Regarding the recent debate on the usefulness of macroscopic kinetics for plasma polymerization, we further investigated the deposition of oxygen-containing functional plasma polymers based on low pressure CO2/C2H4 RF discharges in order to find differences and transitions in the growth mechanism. A reduction in deposition rate with increasing CO2/C2H4 ratio and a drop in deposition rate at enhanced energy input have been observed. Both effects are found to be mainly related to plasma-chemical processes such as the production of film-forming species and oxidation in the gas phase. In contrast to plasma etching with non-polymerizing gases, ion-enhanced etching effects were found to play a secondary role for the deposition of oxygen-containing functional plasma polymers.
引用
收藏
页码:889 / 898
页数:10
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