1/f Noise in Single-Walled Carbon Nanotube Films

We use Monte Carlo simulations and modeling to study the 1/f noise in CNT films as a function of device parameters and film resistivity. We consider noise sources due to both tube-tube junctions and nanotubes themselves. By comparing the simulation results with experimental data, we find that the noise generated by tube-tube junctions dominates the total CNT film 1/f noise. We then systematically study the effect of device length, device width and film thickness on the 1/f noise scaling in CNT films. Our results show that the noise amplitude depends strongly on device dimensions and on the film resistivity, following a power-law relationship near the percolation threshold. Despite its relative simplicity, our computational approach explains the experimentally observed 1/f noise scaling in CNT films. Since 1/f noise is a more sensitive measure of percolation than resistivity, these simulations will help improve the performance of CNT film sensors at the micro-nano interface, where noise is an important figure of merit.