Atomic layer deposition of Al2O3, TiO2 and ZnO films into high aspect ratio pores

被引：0

作者：

Sirvio, S. ^{[1
]}

Sainiemi, L. ^{[1
]}

Franssila, S. ^{[1
]}

Grigoras, K. ^{[1
]}

机构：

[1] Aalto Univ, Micro & Naosci Lab, POB 3500, Helsinki, Finland

来源：

TRANSDUCERS '07 & EUROSENSORS XXI, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2 | 2007年

关键词：

porous silicon; anodic alumina; nanopores; micropores; aluminium oxide; zinc oxide; titanium dioxide; ALD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic Layer Deposition (ALD) of aluminium, zinc and titanium oxides into high aspect ratio electrochemically etched pores is described. Macroporous silicon was fabricated by electrochemical etching. Aspect ratios of 50:1 were routinely obtained. Commercial Anodisc alumina pores were used for reference. ALD thin films Al2O3, TiO2 and ZnO were deposited in the pores. The results were studied with scanning electron microscope (SEM). The layer thicknesses were close to the theoretical value calculated from the cycle number, indicating excellent conformality in high aspect ratio structures.

引用

页数：2

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