Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As

被引：63
作者：
Endo, M. [1 ]
Matsukura, F. [1 ,2 ]
Ohno, H. [1 ,2 ]
机构：
[1] Tohoku Univ, Lab Nanoelect & Spintron, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期
关键词：
This work was supported in part by Grant-in-Aids from MEXT/[!text type='JS']JS[!/text]PS; the GCOE Program at Tohoku University; !text type='JS']JS[!/text]PS through its FIRST program; and the ASPIMATT program from [!text type='JS']JS[!/text]T. M.E. was supported by Grant-in-Aid for [!text type='JS']JS[!/text]PS Fellows;
D O I：
10.1063/1.3520514
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors investigate the current density and temperature dependence of current induced effective magnetic field H(eff) through spin-orbit interaction in a ferromagnetic semiconductor Ga(0.92)Mn(0.08)As having uniaxial magnetic anisotropy. The change of the magnitude of apparent magnetic anisotropy induced by H(eff) that is dependent on the current direction and density is observed by transport measurements using the planar Hall effect. The authors show the 180 degrees magnetization switching through H(eff) by applying pulsed current. (C) 2010 American Institute of Physics. [doi:10.1063/1.3520514]
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页数：3
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