Highest occupied molecular orbital-lowest unoccupied molecular orbital gaps of doped silicon clusters from core level spectroscopy

被引：25

作者：

Lau, J. T. ^{[1
,2
]}

Vogel, M. ^{[1
,2
]}

Langenberg, A. ^{[1
,2
]}

Hirsch, K. ^{[1
,2
]}

Rittmann, J. ^{[1
,2
]}

Zamudio-Bayer, V. ^{[1
,2
]}

Moeller, T. ^{[2
]}

von Issendorff, B. ^{[3
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Methoden & Instrumentierung Synchrotronstrah, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany

[3] Univ Freiburg, Fak Phys, D-79104 Freiburg, Germany

来源：

JOURNAL OF CHEMICAL PHYSICS | 2011年 / 134卷 / 04期

关键词：

NANOCRYSTALS; PARTICLES;

D O I：

10.1063/1.3547699

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A method to determine band gaps of size-selected and isolated nanoparticles by combination of valence band and core-level photoionization spectroscopy is presented. This approach is widely applicable and provides a convenient alternative to current standard techniques for the determination of band gaps by optical or photoelectron spectroscopy. A first application to vanadium doped silicon clusters confirms a striking size-dependence of their highest occupied-lowest unoccupied molecular orbital gaps. (C) 2011 American Institute of Physics. [doi:10.1063/1.3547699]

引用

页数：3

共 22 条

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