Controlling the Thermoelectric Properties of Thiophene-Derived Single-Molecule Junctions

被引:51
|
作者
Chang, William B. [1 ]
Mai, Cheng-Kang [2 ,3 ]
Kotiuga, Michele [4 ,5 ]
Neaton, Jeffrey B. [4 ,5 ,6 ]
Bazan, Guillermo C. [2 ,3 ]
Segalman, Rachel A. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Chem Engn & Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Chem & Biochem, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, Dept Mat, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
[4] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA
[6] Kavli Energy Nano Sci Inst Berkeley, Berkeley, CA USA
关键词
CONDUCTANCE; TRANSPORT; ELECTRONICS; RESISTANCE; CHEMISTRY; ALIGNMENT;
D O I
10.1021/cm504254n
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thermoelectrics are famously challenging to optimize, because of inverse coupling of the Seebeck coefficient and electrical conductivity, both of which control the thermoelectric power factor. Inorganic-organic interfaces provide a promising route for realization of the strong electrical and thermal asymmetries required for thermoelectrics. In this work, transport properties of inorganic-organic interfaces are probed and understood at the molecular scale using the STM-break junction measurement technique, theory, and a class of newly synthesized molecules. We synthesized a series of disubstituted thiophene derivatives varying the length of alkylthio-linkers and the number of thiophene rings. These molecules allow the systematic tuning of electronic resonances within the junction. We observed that these molecules have a decreasing Seebeck coefficient with increasing length of the alkyl chain, while oligothiophene junctions show an increasing Seebeck coefficient with length. We find that thiophene-Au junctions have significantly higher Seebeck coefficients, compared to benzenedithiol (in the range of 7-15 mu V/K). A minimal tight-binding model, including a gateway state associated with the S-Au bond, captures and explains both trends. This work identifies S-Au gateway states as being important and potentially tunable features of junction electronic structure for enhancing the power factor of organic/inorganic interfaces.
引用
收藏
页码:7229 / 7235
页数:7
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