Flight degradation data of GaAs-on-Si solar cells mounted on highly irradiated ETS-VI

被引：4

作者：

Imaizumi, M ^{[1
]}

Anzawa, O ^{[1
]}

Matsuda, S ^{[1
]}

Yamaguchi, M ^{[1
]}

Ohara, T ^{[1
]}

机构：

[1] Natl Space Dev Agcy Japan, NASDA, Tsukuba, Ibaraki 3058505, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916073

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Flight data of GaAs space solar cells fabricated on Si substrates (GaAs/Si) are analyzed by comparing with the data of GaAs cells on GaAs substrates (GaAs/GaAs). The initial performance of the GaAs/Si cells is comparable to the GaAs/GaAs cells. Both types of cells are mounted on the body of the ETS-VI satellite, which has been highly irradiated due to its anomalous orbit. The cells are estimated to be irradiated about similar to 10(16)cm(-2) level of equivalent 1 MeV electrons at the end of the flight data collection. The independence of the radiation hardness of GaAs/Si cells with respect to the thickness of the cover glass has been shown from the flight data. Also, better performance of GaAs/Si cells compared to GaAs/GaAs cells has observed in the case when a thin (50 mum) cover glass is used and the cells are highly irradiated. The characteristics of the GaAs/Si cells, in addition to taking advantage of its light-weight substrate, are considered to be effective advantage for space missions.

引用

页码：1075 / 1078

页数：4

共 3 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[2] Flight data from solar cell monitor on Engineering Test Satellite-VI and ground test data [J].

Kawasaki, O ;

Hisamatsu, T ;

Matsuda, S .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 50 (1-4) :315-329

[3]

YAMAGUCHI M, IN PRESS PROGR PHOTO

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