Spin-ARPES EUV Beamline for Ultrafast Materials Research and Development

被引:14
作者
Nie, Zhonghui [1 ]
Turcu, Ion Cristian Edmond [1 ,2 ]
Li, Yao [1 ]
Zhang, Xiaoqian [1 ]
He, Liang [1 ]
Tu, Jian [1 ]
Ni, Zhiqiang [1 ]
Xu, Huangfeng [1 ]
Chen, Yequan [1 ]
Ruan, Xuezhong [1 ]
Frassetto, Fabio [3 ]
Miotti, Paolo [3 ]
Fabris, Nicola [3 ]
Poletto, Luca [3 ]
Wu, Jing [4 ]
Lu, Qiangsheng [5 ,6 ]
Liu, Chang [5 ,6 ]
Kampen, Thorsten [7 ]
Zhai, Ya [8 ]
Liu, Wenqing [9 ]
Cacho, Cephise [10 ]
Wang, Xuefeng [1 ]
Wang, Fengqiu [1 ]
Shi, Yi [1 ]
Zhang, Rong [1 ]
Xu, Yongbing [1 ,11 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China
[2] Cent Laser Facil, STFC Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England
[3] CNR, Inst Photon & Nanotechnol, I-35131 Padua, Italy
[4] York Univ, Dept Phys, York YO10 5DD, N Yorkshire, England
[5] Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
[6] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
[7] Tech Univ Berlin, Dept Solid State Phys, D-10623 Berlin, Germany
[8] Southeast Univ, Dept Phys, Nanjing 210009, Jiangsu, Peoples R China
[9] Royal Holloway Univ London, Dept Elect Engn, Egham TW20 0EX, Surrey, England
[10] Diamond Light Source Ltd, Harwell Campus, Didcot OX11 0QX, Oxon, England
[11] Univ York, York Nanjing Joint Ctr Spintron, Dept Elect Engn, York YO10 5DD, N Yorkshire, England
来源
APPLIED SCIENCES-BASEL | 2019年 / 9卷 / 03期
基金
中国国家自然科学基金; 英国工程与自然科学研究理事会;
关键词
high-order harmonic generation; ultrafast extreme violet; time-resolved ARPES; ULTRAVIOLET; RADIATION; DYNAMICS;
D O I
10.3390/app9030370
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A new femtosecond, Extreme Ultraviolet (EUV), Time Resolved Spin-Angle Resolved Photo-Emission Spectroscopy (TR-Spin-ARPES) beamline was developed for ultrafast materials research and development. This 50-fs laser-driven, table-top beamline is an integral part of the "Ultrafast Spintronic Materials Facility", dedicated to engineering ultrafast materials. This facility provides a fast and in-situ analysis and development of new materials. The EUV source based on high harmonic generation process emits 2.3 x 10(11) photons/second (2.3 x 10(8) photons/pulse) at H23 (35.7 eV) and its photon energy ranges from 10 eV to 75 eV, which enables surface sensitive studies of the electronic structure dynamics. The EUV monochromator provides the narrow bandwidth of the EUV beamline while preserving its pulse duration in an energy range of 10-100 eV. Ultrafast surface photovoltaic effect with similar to 650 fs rise-time was observed in p-GaAs (100) from time-resolved ARPES spectra. The data acquisition time could be reduced by over two orders of magnitude by scaling the laser driver from 1 KHz, 4W to MHz, KW average power.
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页数:19
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