Proposal and simulated results of a normally off AlGaN/GaN HFET structure with a charged floating gate

被引：15

作者：

Hasegawa, Fumio ^{[1
]}

Kambayashi, Hiroshi ^{[2
]}

Li, Jiang ^{[2
]}

Ikeda, Nariaki ^{[2
]}

Nomura, Takehiko ^{[2
]}

Kato, Sadahiro ^{[2
]}

Yoshida, Seiko ^{[2
]}

机构：

[1] Kogakuin Univ, Dept Elect Engn, Tokyo, Japan

[2] Furukawa Elec, Yokohama R & D Lab, Yokohama, Kanagawa, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

ENHANCEMENT; HEMTS;

D O I：

10.1002/pssc.200880775

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A normally off AlGaN/GaN Hetero-junction Field Effect Transistor (HFET) structure is proposed. Two dimensional electron gas (2DEG) of more than 1x10(13) cm(-2), which a AlGaN/GaN HFET generally has, can be compensated completely by the negative charge in a floating gate or in a SiO2 layer on the AlGaN. Computer simulation showed that the threshold voltage was shifted from -3 V to -15 V with 20 nm SiO2 layer between the control gate and the AlGaN layer, but it was also shifted to +5V with 5x10(13) cm(-2) electrons (negative charge) in the middle of the SiO2 layer (a floating gate) or minus ions in the SiO2 layer itself. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S940 / S943

页数：4

共 7 条

[1] High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [J].