Narrow-line self-assembled GaAs quantum dots for plasmonics

被引:3
作者
Zhang, Hongyi [1 ,2 ,3 ,4 ,5 ,6 ]
Huo, Yongheng [1 ]
Lindfors, Klas [2 ,5 ,6 ,7 ]
Chen, Yonghai [3 ,4 ]
Schmidt, Oliver G. [1 ]
Rastelli, Armando [1 ,8 ]
Lippitz, Markus [2 ,5 ,6 ,9 ]
机构
[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany
[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
[5] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
[6] Univ Stuttgart, Res Ctr SCOPE, D-70550 Stuttgart, Germany
[7] Univ Cologne, Dept Chem, D-50939 Cologne, Germany
[8] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria
[9] Univ Bayreuth, Expt Phys 3, D-95447 Bayreuth, Germany
基金
芬兰科学院;
关键词
CDSE/ZNS NANOCRYSTAL; LIGHT; NANOANTENNA; EMISSION; FLUORESCENCE; INTERFERENCE; SURFACES; PHOTON;
D O I
10.1063/1.4914387
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes. (C) 2015 AIP Publishing LLC.
引用
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页数:4
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