Modeling of Double-gate LDMOSFET Devices including Self-heating

Current analysis based on two-dimensional surface potential model and based on one-dimensional model is presented in this work as well. The impact of controlling the drift region resistance by controlling the bias and/or gate metal work function of a separately added second gate of the LDMOSFET electrostatic is more investigated. Compact models for the current including self-heating were introduced. Self-heating modeling was done using a simple resistive thermal network excited with a current source representing power dissipation in the device. The introduced models are verified to have good agreement with the numerical simulation results. The results of the study show that the introduced structure with its newly introduced separately biased second gate suffers from self-heating when increasing second gate bias which mandates a trade-off between its on-resistance and self-heating behavior.