Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide Treatment

被引：31

作者：

Liu, Han-Yin ^{[1
]}

Chou, Bo-Yi ^{[1
]}

Hsu, Wei-Chou ^{[1
]}

Lee, Ching-Sung ^{[2
]}

Ho, Chiu-Sheng ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Feng Chia Univ 100, Dept Elect Engn, Taichung 40724, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 12期

关键词：

AlGaN/GaN high-electron mobility transistor (HEMT); H2O2; treatment; surface passivation; ELECTRON-MOBILITY TRANSISTORS; SURFACE PASSIVATION; PERFORMANCE;

D O I：

10.1109/TED.2011.2167512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief reports, for the first time, an oxide-passivated AlGaN/GaN high electron mobility transistor by using the hydrogen peroxide (H2O2) treatment. Characterizations by using electron spectroscopy for chemical analysis and transmission electron microscopy have been performed to verify the formation of surface oxide on the AlGaN barrier layer. The present design has demonstrated superior improvements of 41% in the maximum drain/source current density I-DS,I-max, 39% in the drain/source saturation current density at zero gate bias I-DSS0, 47% in the maximum extrinsic transconductance g(m, max), 53.2% in the two-terminal gate/drain breakdown voltage BVGD, 36% in the cutoff frequency f(T), and 20% in the maximum oscillation frequency f(max), as compared with an unpassivated conventional device.

引用

页码：4430 / 4433

页数：4

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