Si nano-photodiode with a surface plasmon antenna

被引：268
作者：
Ishi, T
Fujikata, J
Makita, K
Baba, T
Ohashi, K
机构：
[1] NEC Corp Ltd, Fundamental & Environm Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] NEC Corp Ltd, Syst Devices Res Labs, Otsu, Shiga 5200833, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 12-15期
关键词：
photodiode; subwavelength aperture; optical near-field; surface plasmon;
D O I：
10.1143/JJAP.44.L364
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.
引用
收藏
页码：L364 / L366
页数：3
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