Fabrication of transparent p-n junction diode based on oxide semiconductors deposited by RF magnetron sputtering

Transparent p-n heterojunction diodes based on oxide semiconductors were fabricated by RF magnetron sputtering on alkali-free glass substrates below 500 degrees C. 3% Al-doped ZnO (similar to 400 nm) was deposited as an n-type component, and SrCu2O2 (similar to 290 nm) as a p-type component. Sn-doped In2O3 (similar to 190 nm) and 7% V-doped Ni metals (similar to 13 nm) were deposited as n- and p-type electrodes at room temperature, respectively. XRD pattern revealed the as-deposited n-/p-components were single phases. 3% Al-doped ZnO as an n-type component was deposited under 10% O-2 in Ar atmosphere at 400 degrees C, and showed a conductivity of 0.43 S/cm, carrier density of 10(17)/cm(3) order. SrCu2O2 as a p-type component were deposited under 1% H-2 in Ar atmosphere at 500 degrees C, and showed a conductivity of 0.078 S/cm, carrier density of 10(17)/cm(3) order. The as-deposited p-n heterojunction diode had a total thickness of 895 nm and showed very high optical transparency of about 69% at 550 nm. 1 V measurement of the multilayered transparent p-n heterojunction diode exhibited rectifying characteristics, but the turn-on voltage was somewhat obvious depending on the sample preparation condition. A plausible explanation on the rectifying characteristics of the transparent p-n junction diodes will be suggested. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.