Drain/gate-voltage-dependent on-current and off-current instabilities in polycrystalline silicon thin-film transistors under electrical stress

被引：5
作者：
Wang, SD
Chang, TY
Lo, WH
Sang, JY
Lei, TF
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 9A期
关键词：
on-current (I-on); off-current (I-off); instability; poly-Si TFT; electrical stress;
D O I：
10.1143/JJAP.44.6435
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The On-current (I-on) and Off-current (I-off) instabilities of polycrystalline silicon thin-film transistors (poly-Si TFTs) were investigated under various stress conditions. The stress-induced device degradation was studied by measuring the dependences Of I-on and I-off on the drain/gate voltages. From the results, dissimilar variations in I-on and I-off were observed. The differences can be attributed to the variances in the amount of trap charges in the gate oxide and the spatial distributions of the trap states generated in the poly-Si channel. A comprehensive model for the degradation Of I-on and I-off in poly-Si TFTs under various electrical stress conditions was suggested.
引用
收藏
页码：6435 / 6440
页数：6
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