Electric Field Driven Degradation of AlGaN/GaN High Electron Mobility Transistors during Off-State Stress

被引：0

作者：

Chang, C. Y. ^{[1
]}

Douglas, E. A. ^{[1
]}

Kim, J. ^{[2
]}

Liu, L. ^{[3
]}

Lo, C. F.

Chu, B. H. ^{[3
]}

Cheney, D. J. ^{[4
]}

Gila, B. P.

Ren, F. ^{[3
]}

Via, G. D. ^{[5
]}

Cullen, D. A. ^{[6
]}

Zhou, L. ^{[7
]}

Smith, D. J. ^{[7
]}

Jang, S.

Pearton, S. J. ^{[1
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Dankook Univ, Dept Chem Engn, Yongin 448701, South Korea

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[5] Air Force Res Lab, Wright Patterson AFB, OH 45433 USA

[6] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[7] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53) | 2011年 / 41卷 / 06期

关键词：

RF; RELIABILITY; VOLTAGE; IMPACT;

D O I：

10.1149/1.3629957

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The critical degradation voltage of AlGaN/GaN High Electron Mobility Transistors with Ni/Au gate during off-state electrical stress was studied. Devices with different gate length and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field-driven. The calculated degradation field was similar to 1.8MV/cm by ATLAS simulations. Transmission Electron Microscopy imaging showed creation of defects under the gate after DC stress.

引用

页码：89 / 100

页数：12

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