Ab initio investigation of electronic and magnetic properties of antiferromagnetic/ferroelectric LaMnO3/BaTiO3 interface

被引：15

作者：

Kabanov, V. V. ^{[1
,2
]}

Piyanzina, I. I. ^{[1
,3
]}

Lysogorskiy, Yu, V ^{[3
]}

Tayurskii, D. A. ^{[3
]}

Mamin, R. F. ^{[1
,3
]}

机构：

[1] RAS, FIC KazanSC, Zavoisky Phys Tech Inst, Kazan 420029, Russia

[2] Jozef Stefan Inst, Dept Complex Matter, Ljubljana 1000, Slovenia

[3] Kazan Fed Univ, Inst Phys, Kazan 420008, Russia

来源：

MATERIALS RESEARCH EXPRESS | 2020年 / 7卷 / 05期

基金：

俄罗斯科学基金会;

关键词：

ferromagnetism; ferroelectrics; band structure calculations; TOTAL-ENERGY CALCULATIONS; GAS;

D O I：

10.1088/2053-1591/ab940e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the structural, electronic and magnetic properties of LaMnO3/BaTiO3 heterostructure by means of ab initio calculations within the GGA+U approach. We consider the heterostructure when ferroelectric polarization in the BaTiO3 film is oriented perpendicular to the LaMnO3 substrate. We present atom and spin-resolved density of states calculations for LaMnO3/BaTiO3 heterostructure with different number of BaTiO3 overlayers as well as layer-resolved spectra for the conducting heterostructure. We found that the LaMnO3/BaTiO3 heterostructure becomes conducting with a significant spin polarization indicating that the interface becomes ferromagnetically ordered. The propose concept of a ferroelectrically controlled interface ferromagnetism that offers the possibility to design novel electronic devices.

引用

页数：8

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