Effect of Al2O3 and Au dopants on the structure and electrical properties of ZnO by oxidizing Zn film

被引:5
作者
Ma, Jun [1 ]
Peng, Sunjuan [1 ]
Li, Guojian [1 ]
Wang, Qiang [1 ]
机构
[1] Northeastern Univ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Peoples R China
关键词
Thin film; ZnO; Oxidation; Thermal properties; Physical vapour deposition; AL-DOPED ZNO; THIN-FILMS; THERMOELECTRIC PROPERTIES; OPTICAL-PROPERTIES; PLANE; OXIDE;
D O I
10.1016/j.ceramint.2016.09.076
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Doped ZnO films have been fabricated by oxidizing Au/Zn bilayer, Zn-Al single layer and Au/Zn-Al bilayer for 90 min at 600 degrees C. The effect of Al2O3 and Au dopants on the structure and thermoelectric properties of the doped ZnO films have been explored. The results show that the ZnO films oxidized from the Au/Zn bilayer present dendritic nano-column perpendicular to substrate. The column growth transforms to nanoparticle with doping Al2O3. The existence of Au decreases the particle size of the Al2O3 doped ZnO films and inhibits the growth of Al2O3. The transmittance of the films is sharply reduced with the existence of Al2O3. Both growth model and dopant have significant effect on the electrical properties. The resistivity of the ZnO film oxidized from the Au/Zn film with a nano-column structure is much larger and is about 3x10(5) Omega m at 90 degrees C. However, the resistivity of the ZnO films oxidized from the Au/Zn-Al and Zn-Al decreases to 10(-7)similar to 10(-8) Omega m, which is in the range of semiconductor. The Seebeck coefficient S of the ZnO films oxidized from the Au/Zn-Al and Zn-Al films are both positive. The maximum power factor is 3.995x10(-5) W/(m K-2) at 240 degrees C in the ZnO film oxidized from the Zn-Al film. These results show that the dopants of Au and Al2O3 provide a new method to tune the structure, thermal and optical properties of the doped ZnO films.
引用
收藏
页码:19141 / 19146
页数:6
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