Time-resolved charge detection in graphene quantum dots

被引:44
|
作者
Guettinger, J. [1 ]
Seif, J. [1 ]
Stampfer, C. [1 ]
Capelli, A. [1 ]
Ensslin, K. [1 ]
Ihn, T. [1 ]
机构
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
基金
瑞士国家科学基金会;
关键词
ELECTRONS; COHERENT; SPINS;
D O I
10.1103/PhysRevB.83.165445
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single-electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a nonmonotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above V-b = 2 mV results in an increase of the dot-lead transition rate related to back action of the charge detector current on the dot.
引用
收藏
页数:8
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