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Time-resolved charge detection in graphene quantum dots
被引:44
作者:

Guettinger, J.
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机构:
ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

Seif, J.
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h-index: 0
机构:
ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

Stampfer, C.
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机构:
ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

Capelli, A.
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ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

Ensslin, K.
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机构:
ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

Ihn, T.
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机构:
ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
机构:
[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
基金:
瑞士国家科学基金会;
关键词:
ELECTRONS;
COHERENT;
SPINS;
D O I:
10.1103/PhysRevB.83.165445
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single-electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a nonmonotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above V-b = 2 mV results in an increase of the dot-lead transition rate related to back action of the charge detector current on the dot.
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