Time-resolved charge detection in graphene quantum dots

被引：44

作者：

Guettinger, J. ^{[1
]}

Seif, J. ^{[1
]}

Stampfer, C. ^{[1
]}

Capelli, A. ^{[1
]}

Ensslin, K. ^{[1
]}

Ihn, T. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 16期

基金：

瑞士国家科学基金会;

关键词：

ELECTRONS; COHERENT; SPINS;

D O I：

10.1103/PhysRevB.83.165445

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present real-time detection measurements of electron tunneling in a graphene quantum dot. By counting single-electron charging events on the dot, the tunneling process in a graphene constriction and the role of localized states are studied in detail. In the regime of low charge detector bias we see only a single time-dependent process in the tunneling rate which can be modeled using a Fermi-broadened energy distribution of the carriers in the lead. We find a nonmonotonic gate dependence of the tunneling coupling attributed to the formation of localized states in the constriction. Increasing the detector bias above V-b = 2 mV results in an increase of the dot-lead transition rate related to back action of the charge detector current on the dot.

引用

页数：8

共 60 条

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