Beyond 110 GHz Uni-Traveling Carrier Photodiodes on an InP-Membrane-on-Silicon Platform

被引：11

作者：

de Graaf, Jasper ^{[1
]}

Zhao, Xinran ^{[1
]}

Konstantinou, Dimitrios ^{[1
]}

van den Hout, Menno ^{[1
]}

Reniers, Sander ^{[1
]}

Shen, Longfei ^{[1
]}

van der Heide, Sjoerd ^{[1
]}

Rommel, Simon ^{[1
]}

Monroy, Idelfonso Tafur ^{[1
]}

Okonkwo, Chigo ^{[1
]}

Cao, Zizheng ^{[1
]}

Koonen, Ton ^{[1
]}

Williams, Kevin ^{[1
]}

Jiao, Yuqing ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Inst Photon Integrat IPI, NL-5600 MB Eindhoven, Netherlands

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2022年 / 28卷 / 02期

基金：

欧盟地平线“2020”;

关键词：

Photodiode (PD); uni-traveling-carrier photodiode (UTC-PD); nanophotonic; InP-membrane-on-silicon; waveguide integrated; POWER;

D O I：

10.1109/JSTQE.2021.3110411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membraneon-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as 3 x 2 mu m(2) are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 Omega and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.

引用

页数：10

共 29 条

[1]

Agrell E., 2018, 2018 IEEE Photonics Conference (IPC), P1

[2] Linearity of Modified Uni-Traveling Carrier Photodiodes [J].