Observation of topological states residing at step edges of WTe2

被引:150
作者
Peng, Lang [1 ,2 ]
Yuan, Yuan [1 ,2 ]
Li, Gang [3 ,4 ]
Yang, Xing [1 ,2 ]
Xian, Jing-Jing [1 ,2 ]
Yi, Chang-Jiang [5 ]
Shi, You-Guo [5 ]
Fu, Ying-Shuang [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Hubei, Peoples R China
[3] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
[4] Vienna Univ Technol, Inst Solid State Phys, A-1040 Vienna, Austria
[5] Chinese Acad Sci, Inst Phys, Beijing 100084, Peoples R China
基金
美国国家科学基金会;
关键词
AUGMENTED-WAVE METHOD; MONOLAYER 1T'-WTE2; MONOCLINIC MOTE2; TRANSITION; INSULATORS; METALS;
D O I
10.1038/s41467-017-00745-8
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Topological states emerge at the boundary of solids as a consequence of the nontrivial topology of the bulk. Recently, theory predicts a topological edge state on single layer transition metal dichalcogenides with 1T' structure. However, its existence still lacks experimental proof. Here, we report the direct observations of the topological states at the step edge of WTe2 by spectroscopic-imaging scanning tunneling microscopy. A one-dimensional electronic state residing at the step edge of WTe2 is observed, which exhibits remarkable robustness against edge imperfections. First principles calculations rigorously verify the edge state has a topological origin, and its topological nature is unaffected by the presence of the substrate. Our study supports the existence of topological edge states in 1T'-WTe2, which may envision in-depth study of its topological physics and device applications.
引用
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页数:7
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