Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE

被引:2
作者
Nishio, Mitsuhiro
Saito, Katsuhiko [1 ]
Urata, Kensuke
Okamoto, Yasuhiro
Tanaka, Daichi
Araki, Yasuhiro
Abiru, Masakatsu
Mori, Eiichiro
Tanaka, Tooru
Guo, Qixin
机构
[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan
关键词
Atomic force microscopy; Surfaces; Metalorganic vapor phase cpitaxy; Semiconducting II-VI materials; VAPOR-PHASE EPITAXY; PHOTOLUMINESCENCE PROPERTIES; ZNTE;
D O I
10.1016/j.jcrysgro.2014.10.014
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The growth of undopecl and phosphorus (P)-doped Zn1-xMgxSeyTe1-y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out The compositions of Mg and Sc. surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1-xMgxSeyTe1-y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality. (C) 2014 Elsevier BY. All rights reserved.
引用
收藏
页码:114 / 118
页数:5
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