Observation of compositional domains within individual copper indium sulfide quantum dots

被引:13
|
作者
Harvie, Andrew J. [1 ]
Booth, Matthew [1 ]
Chantry, Ruth L. [2 ]
Hondow, Nicole [3 ]
Kepaptsoglou, Demie M. [2 ]
Ramasse, Quentin M. [2 ]
Evans, Stephen D. [1 ]
Critchley, Kevin [1 ]
机构
[1] Univ Leeds, Sch Phys & Astron, Leeds LS2 9JT, W Yorkshire, England
[2] STFC Daresbury, SuperSTEM, Keckwick Lane, Warrington WA4 4AD, Cheshire, England
[3] Univ Leeds, Inst Mat Res, Leeds LS2 9JT, W Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
EXCITED-STATE DYNAMICS; SEMICONDUCTOR NANOCRYSTALS; HIGHLY LUMINESCENT; DEFECT LEVELS; CUINS2; NANOPARTICLES; SPECTROSCOPY; EMISSION; FILMS;
D O I
10.1039/c6nr03269a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The origin of photoluminescence in copper indium sulfide (CIS) quantum dots (Qdots) has previously been ascribed to a donor-acceptor pair (DAP) recombination, with a crystal lattice defect implicated as the origin of the donor state. In this study, electron energy-loss spectroscopy (EELS) was used to observe defect-rich compositional domains within individual CIS Qdots, supporting a model of defect-state-mediated photoluminescence for these particles, and identifying them as an ideal model system for future study of lattice defects on Qdot properties.
引用
收藏
页码:16157 / 16161
页数:5
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