Electrochemical grafting of organic films on silica

被引:2
作者
Datson, Zane [1 ]
Dief, Essam [1 ]
Li, Tiexin [1 ]
Le Brun, Anton [2 ]
Darwish, Nadim [1 ]
机构
[1] Curtin Univ, Sch Mol & Life Sci, Curtin Inst Funct Mol & Interfaces, Bentley, WA 6102, Australia
[2] Australian Nucl Sci & Technol Org ANSTO, Australian Ctr Neutron Scattering, Lucas Heights, NSW 2234, Australia
关键词
NATIVE-OXIDE SURFACE; CARBON SURFACES; COVALENT MODIFICATION; REDUCTION; MONOLAYERS; ELECTRODES; LAYER;
D O I
10.1039/d2cc03169h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Traditionally, self-assembled monolayers formed on silicon require the removal of the insulating and chemically inert silica layer that naturally forms on the surface of crystalline silicon. The removal of silica is thought to be necessary in order to expose the conducting Si-H surface, which is reactive towards molecules. Here we report the unexpected result of electrochemical formation of thin organic films on silica-terminated silicon with silica thickness up to 20 nm. The process is facilitated by the electrochemical generation of aryl radicals that react with silanol groups at the distal end of silica.
引用
收藏
页码:11378 / 11381
页数:5
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