Review of current high-ZT thermoelectric materials

被引:267
作者
Wei, Jiangtao [1 ,3 ]
Yang, Liangliang [1 ,2 ]
Ma, Zhe [1 ,2 ]
Song, Peishuai [1 ,3 ]
Zhang, Mingliang [1 ,2 ]
Ma, Jing [1 ,2 ]
Yang, Fuhua [1 ,2 ,5 ,6 ]
Wang, Xiaodong [1 ,2 ,4 ,5 ,6 ]
机构
[1] Chinese Acad Sci, Engn Res Ctr Semicond Integrated Technol, Inst Semicond, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100190, Peoples R China
[4] Univ Chinese Acad Sci, Sch Microelect, Beijing 100190, Peoples R China
[5] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
[6] Beijing Engn Res Ctr Semicond Micronano Integrate, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
TELLURIDE THIN-FILMS; HALF-HEUSLER COMPOUNDS; FIGURE-OF-MERIT; LATTICE THERMAL-CONDUCTIVITY; DOPED POLYCRYSTALLINE SNSE; ENHANCED ELECTRICAL-CONDUCTIVITY; N-TYPE SNSE; P-TYPE SNSE; BISMUTH-TELLURIDE; HIGH-PERFORMANCE;
D O I
10.1007/s10853-020-04949-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermoelectric materials are capable of converting heat and electricity to each other. Thermoelectric devices can be miniaturized and highly integrated with existing semiconductor chip systems with microgenerators or microrefrigerators. After years of research and accumulation, BiTe series, SnSe series, CuSe series, half-Heusler series, multicomponent oxides series, organic-inorganic composites series, and GeTe/PbTe series have been found to have excellent thermoelectric properties. According to theoretical calculation, when the diameter of Bi(2)Te(3)nanowires is 5 A, the ZT value reaches 14, and graphdiyne has a ZT value of 4.8 at 300 K. Experimental measurements revealed that the ZT value of n-type SnSe reached 2.8. This review would focus on the updated experimental and theoretical achievements of seven kinds of materials, including BiTe series, SnSe series, CuSe series, multicomponent oxides, half-Heusler alloys, organic-inorganic composites, and GeTe/PbTe series. The preparation method, microstructure characteristics, device structure, and thermoelectric properties of each material will be described in detail. By analyzing the performance of these materials, three possible development directions are put forward for how to further improve the thermoelectric properties of materials.
引用
收藏
页码:12642 / 12704
页数:63
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