Ion-channeling analysis of boron clusters in silicon

被引：1
作者：
Selen, LJM
Janssen, FJJ
van IJzendoorn, LJ
de Voigt, MJA
Theunissen, MJJ
Smulders, PJM
Eijkemans, TJ
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, Cyclotron Lab, Res Inst CPS, NL-5600 MB Eindhoven, Netherlands
[2] Eindhoven Univ Technol, Dept Appl Phys, Cyclotron Lab, Res Inst COBRA, NL-5600 MB Eindhoven, Netherlands
[3] Philips Res Labs, Eindhoven, Netherlands
[4] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
[5] Eindhoven Univ Technol, Dept Appl Phys, Res Sch Cobra, NL-5600 MB Eindhoven, Netherlands
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 09期
关键词：
D O I：
10.1063/1.1405838
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have measured axially channeled Rutherford backscattering spectra of Si1-xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements. (C) 2001 American Institute of Physics.
引用
收藏
页码：4741 / 4747
页数：7
相关论文
共 17 条
[1]  
AGARWAL A, 1997, APPL MAT, V49, P1
[2]  
DIRKS AG, 1999, P ION IMPL TECHN 98, V2, P1167
[3]  
Feldman L.C., 1982, MAT ANAL ION CHANNEL
[4]   STRAIN IN ULTRATHIN EPITAXIAL-FILMS OF GE/SI(100) MEASURED BY ION-SCATTERING AND CHANNELING [J].
FELDMAN, LC ;
BEVK, J ;
DAVIDSON, BA ;
GOSSMANN, HJ ;
MANNAERTS, JP .
PHYSICAL REVIEW LETTERS, 1987, 59 (06) :664-667
[5]   GE SEGREGATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI1-XGEX/SI LAYERS [J].
GRAVESTEIJN, DJ ;
ZALM, PC ;
VANDEWALLE, GFA ;
VRIEZEMA, CJ ;
VANGORKUM, AA ;
VANIJZENDOORN, LJ .
THIN SOLID FILMS, 1989, 183 :191-196
[6]   INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].
GRUNDMANN, M ;
STIER, O ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981
[7]   X-RAY CHARACTERIZATION OF SI DELTA-DOPING IN GAAS [J].
HART, L ;
FAHY, MR ;
NEWMAN, RC ;
FEWSTER, PF .
APPLIED PHYSICS LETTERS, 1993, 62 (18) :2218-2220
[8]   An ion scattering study of the interaction of oxygen with Si(111): Surface roughening and oxide growth [J].
Lu, HC ;
Gusev, EP ;
Garfunkel, E ;
Gustafsson, T .
SURFACE SCIENCE, 1996, 351 (1-3) :111-128
[9]   Strain measurements in ultra-thin buried films (<50Å) with RBS ion channeling [J].
Selen, LJM ;
Janssen, FJJ ;
van IJzendoorn, LJ ;
Theunissen, MJJ ;
Smulders, PJM ;
de Voigt, MJA .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 :492-495
[10]   COMPUTER-SIMULATION OF CHANNELING IN SINGLE-CRYSTALS [J].
SMULDERS, PJM ;
BOERMA, DO .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 29 (03) :471-489
12